Fellowship - Next-Generation Innovative Electronic Devices

Job Reference: 000328

Location: Japan

Closing Date: 21/04/2023

Job Posted Date: 28/11/2022

Salary: 10M JPY

Employment Type: Toshiba Fellowship

Business Type: Research & Development

Research Topic Number 4 - Next-generation innovative electronic devices 

Toshiba group aims to contribute to the achievement of carbon neutrality and a circular economy through digitization under our basic commitment of "Committed to People, Committed to the Future." and is presently developing new technologies in CPS (Cyber Physical System) fields[1]. We are working on the R&D of power semiconductor device / module, sensing device / module, photonics-electronics convergence device / module and information storage device as technologies that support the CPS, and in the future, we will promote further high functionality and high performance by integrating with IoT (Internet of Things) and AI (Artificial Intelligence) technologies. Specifically, we aim to create the following innovative next-generation device and module technologies.
(1)    Next-generation high-performance Si, SiC, and GaN power semiconductor device technologies [2,3,4] and innovative highly integrated power module and high power density power converter technologies [5].
(2)    Innovative sensing and photonics-electronics convergence device / module technologies based on semiconductor technology such as MEMS [6,7] and silicon photonics [8,9]. 
(3)    Next-generation information storage device and spintronic device / module technologies by integrating spintronic technology with AI and machine learning [10,11].

Expected Research Proposals
The following are examples of research themes that we expect as research proposals.
•    Research and development of innovative power semiconductor devices including Si, SiC and GaN that realize power saving.
•    Research and development of highly integrated power module and high power density power converter using innovative Si, SiC, and GaN power semiconductor devices.
•    Application of AI technologies for precise analysis and design of power semiconductor devices and modules.
•    Research on device control technologies for inertial sensors and sensor fusion technologies for position estimation.
•    Research on highly sensitive, low power consumption, and highly selective gas sensor technologies utilizing AI and machine learning.
•    Research on photonics-electronics convergence devices/modules technologies that integrates electronic and optical devices based on silicon photonics technologies.
•    Research on spintronic device design and data processing application technology for ultra-large capacity HDDs.
•    Research on device analysis and CPS module technology for innovative and ultra-sensitive spintronic sensors.
Not limited to examples described here, we look forward to receiving research proposals for future technologies related to innovative next-generation devices and module technologies in CPS fields.

[1] https://www.global.toshiba/ww/ir/corporate/pr/pr2022/pr20220602.html
[2] T. Sakano, et.al, “Three-level Gate Drive Technique for Enhancing Switching Loss Reduction in Triple-Gate IGBTs”, in Proc of the 34th Int. Symp. on Power Semicond. Devices & ICs, p.117(2022)
[3] T. Ohashi, et.al, “Improved Clamping Capability of Parasitic Body Diode Utilizing New Equivalent Circuit Model of SBD-embedded SiC MOSFET”, in Proc of the 33rd Int. Symp. On Power Semicond. Devices & Ics, p.79(2021)
[4] Y. Kajiwara, et.al, “Suppression of current collapse by Access-region Carrier Enhancement technique in GaN-MOSFETs”, in Proc of the 34th Int. Symp. on Power Semicond. Devices & ICs, p.317(2022) 
[5] K. Arita, et.al, “99%, 15W/cm3 capacitively coupled modular DCPET for low-voltage power supply system”, in Proc of Int. Power Electronics Conference 2022 ECCE AISA, p.2628(2022)
[6] Y. Hayashi, et.al, “Smoldering Fire Detection Using Low-Power Capacitive MEMS Hydrogen Sensor for Future Fire Alarm”, in Proc. of the 21st International Conference on Solid-State Sensors, Actuators and Microsystems, p.267(2021)
[7] F. Miyazaki, et.al, “A 0.1 Deg/H Module-Level Silicon MEMS Rate Integrating Gyroscope Using Virtually Rotated Donut-mass Structure and Demonstration of the Earth’s Rotation Detection”, in Proc. of the 21st International Conference on Solid-State Sensors, Actuators and Microsystems, p.402(2021)
[8] K. Ohira, et. al, “On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide”, Optics Express, Vol.18, p.15440 (2010) 
[9] J. W. Silverstone, K. Ohira, et. al, “On-chip quantum interference between silicon photon-pair sources”, Nature Photonics、Vol.8, p.104 (2014)
[10] M. Takagishi, et.al, “Design Concept of MAS Effect Dominant MAMR Head and Numerical Study”, in IEEE Transaction on Magnetics Vol.57, Iss.3, 9208742(2021)
[11] S. Shirotori, et.al, “Symmetric response magnetoresistance sensor with low 1/f noise by using an anti-phase AC modulation bridge”, in IEEE Transaction on Magnetics Vol.57, Iss.2, Part1, 4000305(2021)


This position is now closed. We are no longer accepting applications for this position.