Fellowship - Development of novel compound semiconductor devices by controlling the physical properties of wide-band gap materials

Job Reference: 000061

Location: Japan

Closing Date: 31/12/2018

Job Posted Date: 28/09/2018

Salary: C10M JPY

Employment Type: Toshiba Fellowship

Business Type: Research & Development

Wide-band gap semiconductors with a larger band gap than Si are expected to be applied to next generation power devices and solid-state lighting devices, supporting a future energy-saving society. Although they have outstanding electrical and optical characteristics, their features are not fully utilizable due to the instability and the uncontrollability of their physical properties, because the relation between the crystal defect or the interface state, which are inherent in a wide-band gap semiconductor, and the electronic property has not been clarified. 
The aim of this research is to establish technologies to realise the excellent characteristics of power semiconductor devices with wide-band gap semiconductors, such as, SiC, GaN, AlN, Ga2O3 and to implement the design of novel device structures with the wide-gap semiconductors, or the evaluation, the analysis and the modeling of physical mechanisms.

Knowledge and Skills Required

Candidates should possess expertise in either theory of semiconductor physics or evaluation and analysis of electron devices.

Related Papers

[1] K. Uesugi, et al, "Improvement of Channel Mobility of GaN-MOSFETs With Thermal Treatment for Recess Surface", 'Phys. Status Solidi A 2017, 170051.
[2] T. Yonehara, et al, "Improvement of Positive Bias Temperature Instability Characteristic in GaN MOSFETs by Control of Impurity Density in SiO2 Gate Dielectric'', IEDM17-745.
[3] Y. Kagiwara, et al, "Suppression of Positive Bias Temperature Instability in GaN-MOSFETs", SSDM 2017..


This position is now closed. We are no longer accepting applications for this position.