Wide-band gap semiconductors with a larger band gap than Si are expected to be applied to next generation power devices and solid-state lighting devices, supporting a future energy-saving society. Although they have outstanding electrical and optical characteristics, their features are not fully utilizable due to the instability and the uncontrollability of their physical properties, because the relation between the crystal defect or the interface state, which are inherent in a wide-band gap semiconductor, and the electronic property has not been clarified.
The aim of this research is to establish technologies to realise the excellent characteristics of power semiconductor devices with wide-band gap semiconductors, such as, SiC, GaN, AlN, Ga2O3 and to implement the design of novel device structures with the wide-gap semiconductors, or the evaluation, the analysis and the modeling of physical mechanisms.
Knowledge and Skills Required
Candidates should possess expertise in either theory of semiconductor physics or evaluation and analysis of electron devices.
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 T. Yonehara, et al, "Improvement of Positive Bias Temperature Instability Characteristic in GaN MOSFETs by Control of Impurity Density in SiO2 Gate Dielectric'', IEDM17-745.
 Y. Kagiwara, et al, "Suppression of Positive Bias Temperature Instability in GaN-MOSFETs", SSDM 2017..